for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information general description the 1214GN-550V is an internally matched, common source, class ab gan on sic hemt transistor capable of providing over 17db gain, 550 watts of pulsed rf output power at 300 s pulse width, 10% duty factor across the 1200 to 1400 mhz band. the transistor has internal pre-match for optimal performance. th is hermetically sealed transistor is designed for l-band radar applications. it utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. case outline 55-kr common source absolute maximum ratings maximum power dissipation device dissipation @ 25 ? c 1200 w maximum voltage and current drain-source voltage (v dss ) 150 v gate-source voltage (v gs ) -8 to +0 v maximum temperatures storage temperature (t stg ) -55 to +125 ? c operating junction temperature +250 ? c electrical characteristics @ 25 ? c symbol characteristics test conditions min typ max units pout output power pout=550w, freq=1200, 1300, 1400 mhz 550 w gp power gain pout=550w, freq=1200, 1300, 1400 mhz 16 17 db ? d drain efficiency pout=550w, freq=1200, 1300, 1400 mhz 50 55 % dr droop pout=550w, freq=1200, 1300, 1400 mhz 1.0 db vswr-t load mismatch tolerance pout=550w, freq=1400 mhz 3:1 ? jc thermal resistance pulse width=300us, duty=10% 0.21 c/w ? bias condition: vdd=+50v, idq=100ma average curre nt (vgs= -2.0 ~ -4.5v ) with gate bias pulse width 400us at t=3ms functional characteristics @ 25 ? c i d(off) drain leakage current v gs = -8v, v d = 150v 64 ma i g(off) gate leakage current v gs = -8v, v d = 0v 20 ma bv dss drain-source breakdown voltage v gs =-8v, i d = 64ma 150 v export classification:ear 99 issue june 2013 1214GN-550V 550 watts - 50 volts, 300 ? s, 10% broad band 1200 - 1400 mhz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information typical performance data freq(gh) pin (w) pout (w) id (a) rl (db) eff(%) g (db) droop (db) 1.2 12 673 2.46 -14.5 57% 17.48 0.4 1.3 12 668 2.25 -9.0 61% 17.45 0.3 1.4 12 595 1.96 -12.5 63% 16.95 0.2 model ? 1214gn \ 550v vdd ? = ? 50v, ? 300us, ? 10% 0% 10% 20% 30% 40% 50% 60% 70% 80% 4681 01 21 4 pin ? (w) efficiency ? (%) 1.2ghz 1.3ghz 1.4ghz 1214GN-550V 550 watts - 50 volts, 300 ? s, 10% broad band 1200 - 1400 mhz model ? 1214gn \ 550v vdd ? = ? 50v, ? 300us, ? 10% 0 100 200 300 400 500 600 700 800 4567891 01 11 21 31 4 pin ? (w) pout ? (w) 14 16 18 20 22 24 gain ? (db) 1.2ghz 1.3ghz 1.4ghz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information transistor impedance information note: source z is looking into the input circuit; load z is looking into the output circuit. impedance data freq (ghz) zs zl 1.2 0.956 - j1.866 1.702 C j1.943 1.3 0.931 - j1.218 1.720 C j1.663 1.4 0.933 - j0.589 1.659 C j1.437 please contact our representa tive for the rf test circuit 1214GN-550V 550 watts - 50 volts, 300 ? s, 10% broad band 1200 - 1400 mhz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information 55-kr package dimension dimension min (mil) min (mm) max (mil) max (mm) a 370 9.40 372 9.44 b 498 12.65 500 12.7 c 700 17.78 702 17.83 d 830 21.08 832 21.13 e 1030 26.16 1032 26.21 f 101 2.56 102 2.59 g 151 3.84 152 3.86 h 385 9.78 387 9.83 i 130 3.30 132 3.35 j 003 .076 004 0.10 k 135 3.43 137 3.48 l 105 2.67 107 2.72 m 085 2.16 86 2.18 n 065 1.65 66 1.68 1214GN-550V 550 watts - 50 volts, 300 ? s, 10% broad band 1200 - 1400 mhz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information the information contained in the document is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitt ed, distributed or disclosed or used without the express duly signed written cons ent of microsemi if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information contained herein may not be modifi ed, by any person other than authorized personnel of microsemi. no license under any patent, copy right, trade secret or other intellectual property right i s granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, es toppels or otherwise. any license under such intellectual property ri ghts must be approved by microsemi in writing signed by an office r of microsemi. microsemi reserves the right to change the configuration, func tionality and performance of its products at anytime without any notice. this product has been subject to limited testing and s hould not be used in conjunction with life-support or other missi on- critical equipment or applications. microsemi assumes no liabilit y whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particu lar purpose, merchantability, or infringement of any patent, copyright or ot her intellectual property right. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp. revision history revision level / date para. affected description 03 / june 2013 - initial preliminary release 1214GN-550V 550 watts - 50 volts, 300 ? s, 10% broad band 1200 - 1400 mhz downloaded from: http:///
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